# Micron Updates DRAM Roadmap With 1δ Node Details

October 27, 2026 at 08:24 AM

> Micron announces the 1δ process for 2027 production, featuring wafer bonding and vertical memory architectures for AI and edge systems.

**Micron** has updated its DRAM roadmap, removing 4F2 memory cells while introducing wafer bonding for the upcoming 1ε process. President **Scott DeBoer** confirmed the 1δ node will enter volume production in late 2027, offering a mid-20% increase in bit density.

The 1δ process is optimized for **HBM5** and new vertical memory architectures like vHBM and vEIM. Micron plans to adopt **High-NA EUV** lithography for the sub-10nm ζÅ node and will introduce new materials for the ηÅ node in collaboration with **Albany NanoTech**.

Vertical memory stacks will be integrated directly onto processors using hybrid bonding and advanced heat-spreading structures. The first-gen vEIM targets 2 TB/s bandwidth at under 1pJ/bit, prioritizing energy efficiency for edge AI and autonomous systems.


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