Micron Abandons 4F² DRAM Architecture Research

Micron halts 4F² DRAM development due to cost and scaling issues, opting to focus on 6F² designs and future 3D DRAM vertical stacking.

has decided to abandon its 4F² DRAM architecture after two decades of research and experimental device manufacturing. Despite inventing the technology, the company determined that 4F² designs offer no meaningful density advantages over 6F² cells.

President Scott DeBoer noted that 4F² DRAM increases manufacturing complexity and costs while facing fundamental scaling limitations. While rivals and include 4F² in their roadmaps, Micron will focus on scaling conventional 6F² designs.

Micron's 1δ process is set for 2027 production, offering a mid-20% bit density boost. The firm plans to adopt lithography and eventually transition to 3D DRAM, which stacks cells vertically to increase memory density as a long-term solution.


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