has unveiled its comprehensive roadmap for DRAM, HBM, and NAND products, highlighting the upcoming 1-Delta DRAM node. This node, manufactured in the U.S., succeeds 1y technology and enables memory to double the bandwidth of DDR5.
The 1-Delta node features advanced HKMG CMOS and 6F2 DRAM, offering a mid-20s percentage bit density improvement. Micron is also developing G11 NAND with over 400 layers, aiming for twice the bit density and 1.5x IO speed uplifts over G9 by late 2027.
These innovations, including LPDDR6 with 35% better efficiency and HBM6, address scaling needs for future data centers. With 400 times more bits per wafer than in 1995, Micron is leveraging High-NA EUV and 3D DRAM to maintain its leadership in memory.