Samsung Electronics is developing three new types of NAND storage specifically for AI applications, according to a report from Zdnet. The company officially announced the zNAND-O variant, which features chips stacked in four or eight layers for local AI use.
The zNAND-O chips utilize through-silicon via connections to optimize performance. Samsung is also reportedly working on a High Bandwidth Flash variant for data centers and a third type focused on high input/output operations per second for AI inference tasks.
While the zNAND-O is confirmed, Samsung has not yet officially announced the other two variants. This strategic move follows a similar path taken by SK Hynix, as South Korean tech leaders race to provide specialized storage solutions for the growing AI market.