Samsung Electronics has reportedly completed qualification testing for its 12-layer HBM4E memory with NVIDIA and several major hyperscalers. According to Hankyung, the testing concluded in late September, following the initial sampling phase started in May.
The 12-layer HBM4E stack offers 48GB capacity and 3.6 TB/s bandwidth, utilizing Samsung’s 1c DRAM and a 4nm logic base die. Operating at 14 Gbps per pin with scaling potential to 16 Gbps, it delivers a 20% performance boost over the previous HBM4 generation.
This milestone follows the 2026 mass production of HBM4 for NVIDIA’s Vera Rubin platform. While Samsung declined to confirm the specific qualification status to reporters, the hardware represents a critical leap in high-performance memory for AI infrastructure.