has updated its DRAM roadmap, removing 4F2 memory cells while introducing wafer bonding for the upcoming 1ε process. President Scott DeBoer confirmed the 1δ node will enter volume production in late 2027, offering a mid-20% increase in bit density.
The 1δ process is optimized for and new vertical memory architectures like vHBM and vEIM. Micron plans to adopt lithography for the sub-10nm ζÅ node and will introduce new materials for the ηÅ node in collaboration with .
Vertical memory stacks will be integrated directly onto processors using hybrid bonding and advanced heat-spreading structures. The first-gen vEIM targets 2 TB/s bandwidth at under 1pJ/bit, prioritizing energy efficiency for edge AI and autonomous systems.