Infineon Technologies AG has successfully produced the first functional power semiconductor devices on 300 mm silicon carbide (SiC) wafers. Processed at the Villach site in Austria, these wafers will be showcased at the upcoming electronica trade fair.
The transition to 300 mm wafers offers 2.3 times more chips per wafer than 200 mm versions. Infineon plans to utilize laser-based Cold-Split technology for production, which is faster and more precise than the conventional wire sawing used for SiC wafers.
This milestone follows Infineon's recent announcement of 300 mm GaN series production. By leveraging SiC's ability to handle high voltages and temperatures, the company aims to scale power electronics manufacturing across Si, GaN, and SiC technologies.
